尾上研究室 研究業績一覧: K. Shinkai, M. Hashimoto, and T. Onoye, A Gate-Delay Model Focusing on Current Fluctuation Over Wide Range of Process-Voltage-Temperature Variations, September 2013.
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K. Shinkai, M. Hashimoto, and T. Onoye, "A Gate-Delay Model Focusing on Current Fluctuation Over Wide Range of Process-Voltage-Temperature Variations," Integration, the VLSI Journal, 46(4), pp. 345--358, September 2013.
ID 721
分類 論文誌
タグ
表題 (title) A Gate-Delay Model Focusing on Current Fluctuation Over Wide Range of Process-Voltage-Temperature Variations
表題 (英文)
著者名 (author) K. Shinkai,M. Hashimoto,T. Onoye
英文著者名 (author)
キー (key)
定期刊行物名 (journal) Integration, the VLSI Journal
定期刊行物名 (英文)
巻数 (volume) 46
号数 (number) 4
ページ範囲 (pages) 345--358
刊行月 (month) 9
出版年 (year) 2013
Impact Factor (JCR)
URL
付加情報 (note)
注釈 (annote)
内容梗概 (abstract)
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BiBTeXエントリ
@article{id721,
         title = {A Gate-Delay Model Focusing on Current Fluctuation over Wide Range of Process-Voltage-Temperature Variations},
        author = {K. Shinkai and M. Hashimoto and T. Onoye},
       journal = {Integration, the VLSI Journal},
        volume = {46},
        number = {4},
         pages = {345--358},
         month = {9},
          year = {2013},
}
  

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