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分類 論文誌
著者名 (author) R. Harada,Y. Mitsuyama,M. Hashimoto,T. Onoye
英文著者名 (author)
キー (key)
表題 (title) Impact of {NBTI}-Induced Pulse-Width Modulation on {SET} Pulse-Width Measurement
表題 (英文)
定期刊行物名 (journal) IEEE Transactions on Nuclear Science
定期刊行物名 (英文)
巻数 (volume) 60
号数 (number) 4
ページ範囲 (pages) 2630--2634
刊行月 (month) August
出版年 (year) 2013
付加情報 (note)
注釈 (annote)
内容梗概 (abstract) This paper gives an explanation that SET pulse-width modulation in bulk CMOS devices happens due to negative bias temperature instability (NBTI). To investigate this, we propose and implement a stress adjustable pulse-width measurement circuit. Measurement results of test chips fabricated in a 65nm bulk CMOS process clearly show that pulse-width broadening and shrinking depend on the condition of static and dynamic stress before the pulse propagation. The measured dependency of pulse-width modulation on supply voltage is well correlated with that of NBTI model. We also point out that soft error rate computed from SET pulse-width distribution measured under static stress is pessimistic.
論文電子ファイル Not available.


[0-140]  R. Harada, Y. Mitsuyama, M. Hashimoto, and T. Onoye, ``Impact of NBTI-Induced Pulse-Width Modulation on SET Pulse-Width Measurement,'' IEEE Transactions on Nuclear Science, vol. 60, no. 4, pp. 2630--2634, August 2013.

@article{0_140,
    author = {R. Harada and Y. Mitsuyama and M. Hashimoto and T. Onoye},
    author_e = {},
    title = {Impact of {NBTI}-Induced Pulse-Width Modulation on {SET} Pulse-
    Width Measurement},
    title_e = {},
    journal = {IEEE Transactions on Nuclear Science},
    journal_e = {},
    volume = {60},
    number = {4},
    pages = {2630--2634},
    month = {August},
    year = {2013},
    note = {},
    annote = {}
}

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