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| K. Shinkai and M. Hashimoto, "Self-Heating in Nano-Scale Vlsi Interconnects," In Proceedings of International Workshop on Information Communication Technology (ICT), S-1-6, August 2010. | |
| ID | 518 |
| 分類 | 国際会議 |
| タグ | |
| 表題 (title) |
Self-Heating in Nano-Scale Vlsi Interconnects |
| 表題 (英文) |
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| 著者名 (author) |
K. Shinkai,M. Hashimoto |
| 英文著者名 (author) |
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| 編者名 (editor) |
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| 編者名 (英文) |
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| キー (key) |
Ken-ichi(Kenichi) Shinkai, Masanori Hashimoto |
| 書籍・会議録表題 (booktitle) |
Proceedings of International Workshop on Information Communication Technology (ICT) |
| 書籍・会議録表題(英文) |
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| 巻数 (volume) |
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| 号数 (number) |
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| ページ範囲 (pages) |
S-1-6 |
| 組織名 (organization) |
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| 出版元 (publisher) |
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| 出版元 (英文) |
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| 出版社住所 (address) |
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| 刊行月 (month) |
8 |
| 出版年 (year) |
2010 |
| 採択率 (acceptance) |
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| URL |
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| 付加情報 (note) |
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| 注釈 (annote) |
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| 内容梗概 (abstract) |
Abstract—This paper investigates the self-heating effect in nano-scale local and global interconnects. Our prediction indicates that the self-heating effect in local signal wires will be greater than that in optimal repeater-inserted global wires. In local wires, the maximum temperature increase from the silicon junction temperature will reach 40.4◦C in a steady state at a 14-nm process. Our attribution analysis also demonstrates that miniaturizing the area of wire cross-section exacerbates selfheating as well as using low-κ material and increased power dissipation in advanced technologies below 28 nm. It is revealed that the impact of self-heating on performance in local wires is limited, while underestimating the temperature may cause an unexpected reliability failure. |
| 論文電子ファイル | 2.pdf (application/pdf) [一般閲覧可] |
| BiBTeXエントリ |
@inproceedings{id518,
title = {Self-Heating in Nano-Scale VLSI Interconnects},
author = {K. Shinkai and M. Hashimoto},
booktitle = {Proceedings of International Workshop on Information Communication Technology (ICT)},
pages = {S-1-6},
month = {8},
year = {2010},
}
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